STMicroelectronics SCTL35N65G2V
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.| Part No. | SCTL35N65G2V |
|---|---|
| Datasheet | SCTL35N65G2V Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 40A Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID SCTL35N65G2V 650 V 67 mΩ 40 A● Very fast and robust intrinsic body diode
● Low capacitances
● Source sensing pin for increased efficiency Gate(1) Driver source(2) Power source(3, 4) NG1DS2PS34D5
APPLICATIONS
● Switching mode power supply● DC-DC converters
● Industrial motor control
DESCRIPTION
The variation of switching loss is almost independent of junction temperature. Product status link SCTL35N65G2V Product summary Order code SCTL35N65G2V Marking 35N65G2V Package PowerFLAT 8x8 HV Packing Tape and reel DS13474 - Rev 1 - December 2020 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating range) Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
