STMicroelectronics SCTW70N120G2V
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.| Part No. | SCTW70N120G2V |
|---|---|
| Datasheet | SCTW70N120G2V Download |
| Manufacturer |  STMicroelectronics |
| Description | 1200V 91A Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID SCTW70N120G2V 1200 V 30 mΩ 91 A● Very fast and robust intrinsic body diode
● Extremely low gate charge and input capacitance
● Very high operating junction temperature capability (TJ = 200 °C)
APPLICATIONS
● Switching mode power supply● DC-DC converters
● Industrial motor control G(1) S(3) AM01475v1_noZen
DESCRIPTION
The variation of switching loss is almost independent of junction temperature. Product status link SCTW70N120G2V Product summary Order code SCTW70N120G2V Marking SCT70N120G2 Package HiP247 Packing Tube DS12008 - Rev 4 - January 2022 For further information contact your local STMicroelectronics sales office. SCTW70N120G2V Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
