STMicroelectronics SCTWA20N120
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.| Part No. | SCTWA20N120 |
|---|---|
| Datasheet | SCTWA20N120 Download |
| Manufacturer |  STMicroelectronics |
| Description | 1200V 20A Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Very tight variation of on-resistance vs. temperature● Slight variation of switching losses vs. temperature
● Very high operating temperature capability (TJ = 200 °C)
● Very fast and robust intrinsic body diode
● Low capacitance
APPLICATIONS
● Solar inverters, UPS● Motor drives
● High voltage DC-DC converters
● Switch mode power supplies Order code SCTWA20N120
DESCRIPTION
The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Table 1: Device summary Marking Package Packaging SCT20N120 HiP247 long leads Tube The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”. See Section 6: "Package information". June 2016 DocID029417 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation.
