STMicroelectronics SCTWA35N65G2V-4
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.| Part No. | SCTWA35N65G2V-4 |
|---|---|
| Datasheet | SCTWA35N65G2V-4 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 45A Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID SCTWA35N65G2V-4 650 V 67 mΩ 45 A● Very fast and robust intrinsic body diode
● Low capacitances
● Source sensing pin for increased efficiency
● Very high operating junction temperature capability (TJ = 200 °C)
APPLICATIONS
● Switching mode power supply● DC-DC converters
● Industrial motor control
DESCRIPTION
The variation of switching loss is almost independent of junction temperature. Product status link SCTWA35N65G2V-4 Product summary Order code SCTWA35N65G2V-4 Marking SCT35N65G2V Package HiP247-4 Packing Tube DS13583 - Rev 1 - December 2020 For further information contact your local STMicroelectronics sales office. SCTWA35N65G2V-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating range) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
