STMicroelectronics SCTWA50N120
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative AM01475v1_noZen properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.| Part No. | SCTWA50N120 |
|---|---|
| Datasheet | SCTWA50N120 Download |
| Manufacturer |  STMicroelectronics |
| Description | 1200V 65A Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Very low RDS(on) over the entire temperature range● Very high operating junction temperature capability (TJ = 200 °C)
● Very fast and robust intrinsic body diode
● Low capacitance HiP247 long leads
APPLICATIONS
D(2, TAB) G(1)● AC-DC converters
● DC-DC converters
● Motor drives
● Solar inverters (string and central)
● Uninterruptable power supplies (UPS)
DESCRIPTION
S(3) The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCTWA50N120 Product summary Order code SCTWA50N120 Marking SCT50N120 Package HiP247 long leads Packing Tube DS11692 - Rev 4 - February 2025 For further information, contact your local STMicroelectronics sales office. SCTWA50N120 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-...
