STMicroelectronics SCTWA90N65G2V
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device AM01475v1_noZen features remarkably low on-resistance per unit area and very good switching performance.| Part No. | SCTWA90N65G2V |
|---|---|
| Datasheet | SCTWA90N65G2V Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 119A Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
HiP247 long leads D(2, TAB) G(1) Order code VDS RDS(on) typ. ID SCTWA90N65G2V 650 V 18 mΩ 119 A● Very fast and robust intrinsic body diode
● Extremely low gate charge and input capacitance
● Very high operating junction temperature capability (TJ = 200 °C)
APPLICATIONS
● Power supply for renewable energy systems● High frequency DC-DC converters
● Charging stations
DESCRIPTION
S(3) The variation of switching loss is almost independent of junction temperature. Product status link SCTWA90N65G2V Product summary Order code SCTWA90N65G2V Marking SCT90N65G2V Package HiP247 long leads Packing Tube DS12678 - Rev 3 - November 2024 For further information contact your local STMicroelectronics sales office. SCTWA90N65G2V Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC =...
