STMicroelectronics SD1285
The SD1285 is a 12.5 V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.APPLICATIONS
. . . . . . 30 MHz 12.5 VOLTS COMMON EMITTER GOLD METALLIZATION IMD − 30 dB POUT = 20 W MIN. WITH 15 dB GAIN .380 4LFL (M113) epoxy sealed ORDER CODE SD1285 BRANDING SD1285 PIN CONNECTIONDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 36 18 4.0 4.5 80 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance October 1992 2.2 °C/W 1/3 SD1285ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO ICES hFE IC = 50mA IC = 50mA IC = 50mA IE = 5mA VCE = 15V VCE = 5V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = 1A 36 36 18 4.0 — 10 — — — — — — — — — — 5 200 V V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit...