STMicroelectronics SD1390
The SD1390 is a gold metallized NPN planar transistor using diffused emitter ballast resistors for reliability and ruggedness. The SD1390 is specifically designed as a low power, high gain driver and can be operated in Class A, B or C.| Part No. | SD1390 |
|---|---|
| Datasheet | SD1390 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . P RELIMINARY DATA 470 MHZ 24 VOLTS POUT = 1.5 W WITH 13.0 dB MIN. GAIN CLASS A COMMON EMITTER POWER SATURATION 2.2 W MIN. .28 0 x 4LS L (M1 2 3 ) O R DE R CODE SD1390 BRANDING SD1390 PIN CONNECTIONDESCRIPTION
1. Collector 2. Emitter 3. Base 4. EmitterABSOLUTE MAXIMUM RATINGS
(T case = 25° C) Symbol Parameter Value Un it VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TC ≤ +75°C) Junction Temperature Storage Temperature 40 24 3.5 0.35 8.33 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 12 °C/W August 23, 1996 1/5 SD1390ELECTRICAL SPECIFICATIONS
(T case = 25° C) STATIC S ym bo l Te s t C o n ditio n s Va lu e Min. Typ . Ma x. Un it BVCBO BVCEO BVEBO ICBO hFE IC = 1 mA IC = 1 mA IE = 1 mA VC B = 24 V VC E = 5 V IE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 0.1 A 40 24 3.5 — 20 — — — — — — — — 1.0 120 V V V mA — DYNAMIC S ym bo l T e s t Co n d itio ns Va lu e Min.
