STMicroelectronics SD1407
The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability.APPLICATIONS
. . . . . . 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 125 W MIN. WITH 15 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1407 BRANDING 1407 PIN CONNECTIONDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 36 4.0 20 270 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance October 1992 0.65 °C/W 1/4 SD1407ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO ICES hFE IC = 100mA IC = 100mA IC = 100mA IE = 10mA VCE = 30V VCE = 5V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = 5A 65 65 35 4.0 — 10 — — — — — — — — — — 15 200 V V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. U...