SD1423
SD1423 is RF AND MICROWAVE TRANSISTORS manufactured by STMicroelectronics.
DESCRIPTION
The SD1423 is a gold metallization epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation for cellular base station applications. The SD1423 is designed as a medium power output device or as the driver for the SD1424.
PIN CONNECTION
1. Collector 2. Base
3. Emitter
ABSOLUTE MAXIMUM RATINGS (T case = 25° C)
Symbol Parameter Value Un it
VCBO VCEO VCES VEBO IC PDISS TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
48 25 45 3.5 2.5 29 +200
- 65 to +150
V V V V A W °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 6 °C/W
August 22, 1996
1/4
..
ELECTRICAL SPECIFICATIONS (T case = 25° C) STATIC
S ym bo l Te s t C o n ditio n s Va lu e Min. Typ . Ma x. Un it
BVCBO BVCEO BVEBO ICBO h FE
IC = 5 0m A IC = 2 0m A IE = 5m A VC B = 2 4V VC E = 1 0V
IE = 0m A IB = 0m A IC = 0m A IE = 0m A IC = 1 00m A
48 25 3.5
- 20
50 30 4.0
- -
- -
- 1.0 100
V V V m A
- DYNAMIC
S ym bo l Te s t C o nd itio ns Va lu e Min. Typ. Ma x. Un it
POUT PG ηc COB f = 9 60 MHz f = 9 60 MHz f = 9 60 MHz f = 1 MHz
VCC = 24 V VCC = 24 V VCC = 24 V VCB = 24V
ICQ = 75 m A ICQ = 75 m A ICQ = 75 m A
15 8 45
- -
- 50 20
- -
- 24
W d B % p F
TYPICAL PERFORMANCE P OWER OUT PUT vs P OWER INP...
