STMicroelectronics SD1423
The SD1423 is a gold metallization epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation for cellular base station applications. The SD1423 is designed as a medium power output device or as the driver for the SD1424.| Part No. | SD1423 |
|---|---|
| Datasheet | SD1423 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF AND MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . 800 - 960 MHz 24 VOLTS EFFICIENCY 50% COMMON EMITTER GOLD METALLIZATION CLASS AB LINEAR OPERATION POUT = 15 W MIN. WITH 8.0 dB GAIN .2 3 0 6 LFL (M11 8 ) epoxy sealed O R DE R CODE SD1423 BRANDING SD1423DESCRIPTION
PIN CONNECTION 1. Collector 2. Base 3. EmitterABSOLUTE MAXIMUM RATINGS
(T case = 25° C) Symbol Parameter Value Un it VCBO VCEO VCES VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 48 25 45 3.5 2.5 29 +200 − 65 to +150 V V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 6 °C/W August 22, 1996 1/4 SD1423ELECTRICAL SPECIFICATIONS
(T case = 25° C) STATIC S ym bo l Te s t C o n ditio n s Va lu e Min. Typ . Ma x. Un it BVCBO BVCEO BVEBO ICBO hFE IC = 5 0mA IC = 2 0mA IE = 5mA VC B = 2 4V VC E = 1 0V IE = 0mA IB = 0mA IC = 0mA IE = 0mA IC = 1 00mA 48 25 3.5 — 20 50 30 4.0 — — — — — 1.0 100 V V V mA — DYNAMIC S ym bo l Te s t C o nd itio ns Va lu e Min.
