STMicroelectronics SD1542-04
The SD1542-04 is a hermetically sealed, gold metallized, silicon NPN power transistor. The SD154204 is designed for applications requiring high peak power and low duty cycles such as IFF. The SD1542-04 is packaged in a hermetic metal/ceramic package with internal input matching, resulting in improved broadband performance and low thermal reistance.| Part No. | SD1542-04 |
|---|---|
| Datasheet | SD1542-04 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS (min.) IFF 1030/1090 MHz REFRACTORY GOLD METALLIZATION 6.0 dB MIN. GAIN BALLASTING AND LOW THERMAL REISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION .400 x .500 2LFL (M112) hermetically sealed ORDER CODE SD1542-04 BRANDING SD1542-4 PIN CONNECTIONDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3. Emitter 4. Base Value Unit VCBO VCES VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 40 1350 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 0.06 °C/W 1/5 SD1542-04ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO ICES hFE IC = 25mA IE = 10mA VCE = 50V VCE = 5V IE = 0mA IC = 0mA IE = 0mA IC = 1A 65 3.5 — 5 — — — — — — 35 200 V V mA — DYNAMIC Symbol Test Conditions Value Min.
