• Part: SD1650
  • Description: RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS
  • Category: Transistor
  • Manufacturer: STMicroelectronics
  • Size: 92.40 KB
Download SD1650 Datasheet PDF
STMicroelectronics
SD1650
SD1650 is RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS manufactured by STMicroelectronics.
DESCRIPTION Designed for 900 MHz cellular radio base station applications, the SD1650 exhibits high collector efficiency with excellent thermal characteristics. Double-section internal input/output matching result in terminal impedance levels easily handled by the circuit designer. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3. Emitter Value Unit VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation (+25°C) Junction Temperature Storage Temperature 60 28 4.0 10 175 +200 - 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 1.5 °C/W - Applies only to rated RF amplifier operation August 1992 1/5 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Valu e Min. Typ. Max. Unit BVCBO BVEBO BVCES BVCEO .. I IC = 50m A IE = 20m A IC = 100m A IC = 100m A VCE = 24V VCE = 5V IC = 6A 60 3.0 60 28 - 20 - - - - - - - - - - 10 200 V V V V m A - h FE DYNAMIC Symbol Test Conditions Valu e Min. Typ. Max. Unit POUT ηc GP VSWR f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz PIN = 12 W PIN = 12 W PIN = 12 W PIN = 12 W ICQ = 300 m A ICQ = 300 m A ICQ = 300 m A 60 45 7 3:1 - - - - - -...