STMicroelectronics SD1727
The SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. Unit POUT G P* IMD* ηc* COB Note: P OUT * f1 f = 30 MHz POUT = 150 W PEP POUT = 150 W PEP POUT = 150 W PEP f = 1 MHz VCE = 50 V VCE = 50 V VCE = 50 V VCE = 50 V VCB = 50 V ICQ = 100mA ICQ = 100mA ICQ = 100mA ICQ = 100mA 150 14 — 37 — — — — — — — — −30 — 220 W dB dBc % pF The SD1727 is also usable...- Max Operating Temp : 200°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | SD1727 |
|---|---|
| Datasheet | SD1727 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & Microwave Transistor |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30 dB COMMON EMITTER GOLD METALLIZATION POUT = 150 W PEP MIN. WITH 14 dB GAIN .500 4LFL (M164) epoxy sealed ORDER CODE SD1727 BRANDING THX15 PIN CONNECTIONDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 110 55 4.0 10 233 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 0.75 °C/W 1/7 SD1727 (THX15)ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO ICEO ICES hFE DYNAMIC Symbol IC = 100mA IC = 100mA IC = 100mA IE = 10mA VCE = 30V VCE = 60V VCE = 6V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 1.4A 110 110 55 4.0 — — 18 — — — — — — — — — — — 5 5 43.5 V V V V mA mA — Test Conditions Value Min.
