STMicroelectronics SD1732
The SD1732 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in UHF and Band IV, V television transmitters and transposers.| Part No. | SD1732 |
|---|---|
| Datasheet | SD1732 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & Microwave Transistor |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . . . . 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING P OUT = 14.0 W MIN. WITH 8.5 dB GAIN .250 x .320 4LFL (M156) epoxy sealed ORDER CODE SD1732 BRANDING TDS595 PIN CONNECTIONDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 45 25 4.0 2 x 2.6 65 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 2.5 °C/W 1/6 SD1732 (TDS595)ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO hFE IC = 20mA IC = 40mA IE = 5mA VCE = 20V IE = 0mA IB = 0mA IC = 0mA IC = 0.5A 45 25 3.0 10 — — — — — — — — V V V — DYNAMIC Symbol Test Conditions Value Min.
