STMicroelectronics SD1855
The SD1855 is a silicon NPN planar transistor designed for high gain linear performance at 2.0 GHz. This part uses gold metallized die and polysilicon site ballasting to achieve high reliability and ruggedness. The SD1855 can be used for applications sucha as telecommunications, radar, ECM, space and other commercial and military systems.| Part No. | SD1855 |
|---|---|
| Datasheet | SD1855 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . 2.0 GHz 20 VOLTS CLASS A OVERLAY GEOMETRY GOLD METALLIZED DIE COMMON EMITTER CONFIGURATION POUT = 2.5W MIN. WITH 6.0 dB GAIN .230 2LFL (M151) hermetically sealed ORDER CODE SD1855 BRANDING TCC20L25 PIN CONNECTION DataSheet4U.comDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit DataShe e 1. Collector 2. Base 3. Emitter VCBO VCES VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 40 25 3.5 0.5 20.6 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 8.5 °C/W 1/3 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com SD1855 (TCC20L25)ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO hFE IC = 2mA IC = 5mA IE = 2mA VCE = 5V IE = 0mA IB = 0mA IC = 0mA IC = 400mA 40 25 3.5 15 — — — — — — — 150 V V V — DYNAMIC Symbol Test Conditions Value Min.
