STMicroelectronics SD1888-03
The SD1888-03 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. SD1888-03 is packaged in a cost-effective epoxy sealed housing ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symb ol Parameter VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance July 1993 1.| Part No. | SD1888-03 |
|---|---|
| Datasheet | SD1888-03 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
.......1.65 GHz 28 VOLTS EFFICIENCY 50% MIN. CLASS C OPERATION COMMON BASE INPUT/OUTPUT MATCHING POUT = 24 W MIN. WITH 9.0 dB GAIN .250 x .320 2LFL (M170) epoxy sealed ORDER CODE SD1888-03 B RA ND IN G 1888-3 PIN CONNECTIONDESCRIPTION
A gold metallized emitter-ballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operating conditions. Collector 2. Emitter 3. Base Value Unit 45 V 12 V 3.0 V 2.6 A 50 W +200 °C − 65 to +150 °C 3.5 °C/W 1/4 SD1888-03ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC S ymb o l Test Conditions BVCBO BVCEO BVEBO hFE IC = 6 mA IC = 6 mA IE = 6 mA VCE = 5 V IE = 0 mA IB = 0 mA IC = 0 mA IC = 1.2 A DYNAMIC S ymb o l POUT GP ηc f = 1.65 GHz f = 1.65 GHz f = 1.65 GHz Test Conditions PIN = 3.0 W PIN = 3.0 W PIN = 3.0 W VCE = 28 V VCE = 28 V VCE = 28 V Va l u e Unit Min. Typ. Max. 45 — — V 12 — — V 3.0 — — V 15 — 150 — Value Min. Typ. Max. 24 — — 9.0 — — 50 — — Unit W dB % T...
