STMicroelectronics SD1891-03
The SD1891-03 is a 28 V silicon NPN transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness.| Part No. | SD1891-03 |
|---|---|
| Datasheet | SD1891-03 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
.......1.65 GHz 28 VOLTS GOLD METALLIZED SYSTEM POLYSILICON SITE BALLASTING OVERLAY DIE GEOMETRY HIGH RELIABILITY AND RUGGEDNESS POUT = 5.0 W MIN. WITH 14.0 dB GAIN .230 2LFL (M151) hermetically sealed ORDER CODE SD1891-03 B RA ND IN G 1891-03 PIN CONNECTIONDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symb ol Parameter VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance March 1993 1. Collector 2. Emitter 3. Base Value Unit 45 V 15 V 3.5 V 1.1 A 8.8 W +200 °C − 65 to +200 °C 20.0 °C/W 1/5 SD1891-03ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC S ymb o l Test Conditions BVCBO BVEBO ICBO hFE IC = 1mA IE = 1mA VCB = 24V VCE = 5V IE = 0mA IC = 0mA IE = 0mA IC = 100mA Va l u e Unit Min. Typ. Max. 45 — — V 3.5 — — V — — 0.5 mA 15 — 150 — DYNAMIC S ymb o l POUT GP ηc COB f = 1.65 GHz f = 1.65 GHz f = 1.65 GHz f = 1 MHz Test Conditions PIN = 200 mW PIN = 200 mW PIN = 200 mW VCB = 28 V VCE = 28 V VCE = 28 V VCE = 28 V Value Min.
