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SD1893-03 Datasheet PDF

STMicroelectronics SD1893-03

The SD1893-03 is a 28 V silicon NPN planar transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. The device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness.
Part No. SD1893-03
Datasheet SD1893-03 Download
Manufacturer
STMicroelectronics
Description RF & MICROWAVE TRANSISTOR
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SD1893-03 datasheet page 1 preview

APPLICATIONS

.......1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY GOLD METALLIZATION HIGH RELIABILITY AND RUGGEDNESS POUT = 10 W MIN. WITH 11.0 dB GAIN COMMON BASE .230 2LFL (M151) hermetically sealed ORDER CODE SD1893-03 B RA ND IN G 1893-3 PIN CONNECTION

DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C) Symb ol Parameter VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 1. Collector 2. Emitter 3. Base Value Unit 45 V 15 V 3.5 V 4.4 A 43 W +200 °C − 65 to +200 °C 5.5 °C/W 1/5 SD1893-03

ELECTRICAL SPECIFICATIONS

(Tcase = 25°C) STATIC S ymb o l Test Conditions BVCBO BVEBO ICBO hFE IC = 3mA IE = 3mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA IE = 0mA IC = 300mA Va l u e Unit Min. Typ. Max. 45 — — V 3.5 — — V — — 5 mA 15 — 150 — DYNAMIC S ymb o l POUT GP ηc COB f = 1.65 GHz f = 1.65 GHz f = 1.65 GHz f = 1 MHz Test Conditions PIN = 0.6 W PIN = 0.6 W PIN = 0.6 W VCB = 28 V VCE = 28 V VCE = 28 V VCE = 28 V Value Min.
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