STMicroelectronics SD1895-03
The SD1895-03 is a 28 V silicon NPN planar transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness.| Part No. | SD1895-03 |
|---|---|
| Datasheet | SD1895-03 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY ALL GOLD METALLIZED SYSTEM HIGH RELIABILITY AND RUGGEDNESS COOMON BASE P OUT = 15 W MIN. WITH 9.2 dB GAIN .250 x .320 2LFL (M170) epoxy sealed ORDER CODE SD1895-03 BRANDING SD1895-3 PIN CONNECTION DataShee DataSheet4U.comDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 45 15 3.0 3.0 37.2 +200 − 65 to +150 V V V A W °C °C THERMAL DATA DataSheet4U.com RTH(j-c) July 1993 Junction-Case Thermal Resistance 4.7 °C/W 1/4 DataSheet4U.com DataSheet 4 U .com SD1895-03ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO hFE IC = 5 mA IC = 5 mA IE = 5 mA VCE = 5 V IE = 0 mA IB = 0 mA IC = 0 mA IC = 1 A 45 12 3.0 15 — — — — — — — 150 V V V — DYNAMIC Symbol Test Conditions Value Min.
