STMicroelectronics SD2900
The SD2900 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz PIN CONNECTION 1.| Part No. | SD2900 |
|---|---|
| Datasheet | SD2900 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs |
| Buy | Stock & Price |
DESCRIPTION
Drain 2. SourceABSOLUTE MAXIMUM RATINGS
(Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1M Ω) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage Temperature Value 65 65 ± 20 900 21.9 200 -65 to 150 3.Gate 4. Source Uni t V V V mA W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case T hermal Resistance Case-Heatsink T hermal Resistance ∗ 8.0 0.30 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/8 SD2900 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 5 mA V DS = 28 V V DS = 0 V I D = 10 mA ID = 0.5 A I D = 0.5 A V DS = 28 V V DS = 28 V V DS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 0.2 8.5 7.8 1.4 1.0 Min.
