STMicroelectronics SD2931-12MR
The SD2931-12MR is a gold metallized N-channel MOS field-effect RF power transistor. The device is mechanically compatible with the SD2931 but offers better thermal capability (25% lower thermal resistance), representing the best-in-class in transistors for ISM applications, where reliability and ruggedness are critical factors. The SD2931-12MR benefits from the latest generation of environmentally designed packing, ruggedized against cyclic high moisture operation and severe storage conditions.FEATURES
● Gold metallization● Excellent thermal stability
● Common source push-pull configuration
● POUT = 150 W min. with 14 dB gain @ 175 MHz
● Thermally enhanced packing for lower junction temperatures
● GFS and VGS sort marked on unit
● Moisture resistant package specifically designed to operate in extreme environments
DESCRIPTION
Electrically identical to the standard SD2931 MOSFET, it is used for 50 V DC large signal applications up to 230 MHz. DS9247 - Rev 4 - February 2018 For further information contact your local STMicroelectronics sales office. 1 Electrical data SD2931-12MR Electrical data 1.1 1.2 Maximum ratings TCASE = 25 °C Symbol V(BR)DSS VDGR VGS ID PDISS TJ TSTG Table 1. Absolute maximum ratings Parameter Drain source voltage Drain-gate voltage (RGS = 1 MΩ) Gate-source voltage Drain current Power dissipation Max. operating junction temperature Storage temperature Thermal data Symbol RthJC Table 2. Thermal data Parameter Junction-to-case thermal resistance Value 125 1...