STMicroelectronics SD56060
The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V.| Part No. | SD56060 |
|---|---|
| Datasheet | SD56060 Download |
| Manufacturer |  STMicroelectronics |
| Description | 60W 28V RF power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code Frequency VDD SD56060 860 MHz 28 V● Excellent thermal stability
● Common source configuration push-pull
● BeO-free package POUT 60 W Gain 16 dB Efficiency 60
APPLICATIONS
● Ground/air communication● ISM
DESCRIPTION
Product status link SD56060 Product summary Order code SD56060 Marking SD56060 Package M246 Packing Box Base/bulk quantity 20/60 DS11102 - Rev 2 - December 2021 For further information contact your local STMicroelectronics sales office. SD56060 Electrical ratings 1 Electrical ratings Symbol VDS VGS ID PTOT TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation at TC = 70 °C Storage temperature range Maximum junction temperature Symbol RthJC Table 2. Thermal data Parameter Thermal resistance, junction-to-case Value Unit 65 V ±20 V 8 A 148 W -65 to 150 °C 200 °C Value 0.875 Unit °C/W DS11102 - Rev 2 page 2/13 SD56060 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified.
