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SD56060 - RF power transistor

General Description

The device is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz.

It is designed for high gain and broadband performance operating in common source mode at 28 V.

Key Features

  • Excellent thermal stability.
  • Common source configuration Push-pull.
  • POUT = 60 W with 16 dB gain @ 860 MHz.
  • BeO-free package 0 (SR[VHDOHG Figure 1. Pin connections .

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SD56060 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - target specification Features • Excellent thermal stability • Common source configuration Push-pull • POUT = 60 W with 16 dB gain @ 860 MHz • BeO-free package 0 (SR[VHDOHG Figure 1. Pin connections  Description The device is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for applications from 1 to 1000 MHz. 'UDLQ *DWH   6RXUFH Order code SD56060 Table 1.