SD56060 Description
The device is a mon source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in mon source mode at 28 V. It is ideal for applications from 1 to 1000 MHz.
SD56060 Key Features
- Excellent thermal stability
- mon source configuration Push-pull
- POUT = 60 W with 16 dB gain @ 860 MHz
- BeO-free package