Datasheet Summary
RF power transistor the LdmoST family
Features
- Excellent thermal stability
- mon source configuration Push-pull
- POUT = 150W with 13dB gain @ 860MHz / 32V
- BeO free package
- Internal input matching
- In pliance with the 2002/95/EC european directive ct(s) Description
M252 Epoxy sealed u The SD56150 is a mon source N-channel rod enhancement-mode lateral Field-Effect RF power transistor designed for broadband mercial
P and industrial applications at frequencies up to te 1.0 GHz. The SD56150 is designed for high le gain and broadband performance operating in o mon source mode at 32 V. Its internal s matching makes it ideal for TV broadcast b applications...