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SD56150 - RF POWER TRANSISTORS

General Description

P and industrial applications at frequencies up to te 1.0 GHz.

Key Features

  • Excellent thermal stability.
  • Common source configuration Push-pull.
  • POUT = 150W with 13dB gain @ 860MHz / 32V.
  • BeO free package.
  • Internal input matching.
  • In compliance with the 2002/95/EC european directive ct(s).

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SD56150 RF power transistor the LdmoST family Features ■ Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 150W with 13dB gain @ 860MHz / 32V ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european directive ct(s) Description M252 Epoxy sealed u The SD56150 is a common source N-channel rod enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial P and industrial applications at frequencies up to te 1.0 GHz. The SD56150 is designed for high le gain and broadband performance operating in o common source mode at 32 V. Its internal s matching makes it ideal for TV broadcast b applications requiring high linearity. Figure 1. Pin connection 1 2 -O 3 )5 4 ct(s 1. Drain du 2.