STMicroelectronics SD57030-01
The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.| Part No. | SD57030-01 |
|---|---|
| Datasheet | SD57030-01 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF power transistor |
| Buy | Stock & Price |
DESCRIPTION
M250 epoxy sealed ORDER CODE SD57030-01 BRANDING TSD57030-01 PIN CONNECTION 1 3ABSOLUTE MAXIMUM RATINGS
(TCASE = 25°C) Symbol Parameter V(BR)DSS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS = 1 MΩ) VGS Gate-Source Voltage ID Drain Current PDISS Power Dissipation (@ Tc = 70°C) Tj Max. Operating Junction Temperature TSTG Storage Temperature THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance March, 24 2003 1. Drain 2. Gate 2 3. Source Value Unit 65 V 65 V + 20 V 4 A 74 W 200 °C -65 to + 200 °C 1.75 °C/W 1/7 SD57030-01 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS CRSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 10 mA VDS = 28 V VDS = 0 V ID = 50 mA ID = 3 A ID = 3 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz DYNAMIC Symbol POUT GPS ηD Load mismatch Test Conditions VDD = 28 V IDQ = 50 mA VDD = 28 V IDQ = 50 mA POUT = 30 W VDD = 28 V IDQ = 50 mA POUT = 30 W VDD = 28 V IDQ = 50 mA POUT = 28 W ALL PHASE ANGLES f = 945 MHz f = 945 MHz f = 945 MHz f = 945 MHz Min.
