STMicroelectronics SD57045-01
The SD57045-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045-01 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.| Part No. | SD57045-01 |
|---|---|
| Datasheet | SD57045-01 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(TCASE = 25°C) Symbol Parameter V(BR)DSS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS = 1 MΩ) VGS Gate-Source Voltage ID Drain Current PDISS Power Dissipation (@ Tc = 70°C) Tj Max. Operating Junction Temperature TSTG Storage Temperature THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance November, 19 2002 M250 epoxy sealed ORDER CODE SD57045-01 BRANDING SD57045-01 PIN CONNECTION 1 3 1. Drain 2. Gate 2 3. Source Value 65 65 ± 20 5 93 200 -65 to + 200 1.4 Unit V V V A W °C °C °C/W 1/11 SD57045-01 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 28 V VDS = 0 V ID = 250 mA ID = 3 A ID = 5 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz DYNAMIC Symbol Test Conditions POUT VDD = 28 V IDQ = 250 mA f = 945 MHz IMD3 VDD = 28 V IDQ = 250 mA POUT = 45 W...
