STMicroelectronics SGSF324
The SGSF324 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The SGSF series is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors.| Part No. | SGSF324 |
|---|---|
| Datasheet | SGSF324 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: s SWITCH MODE POWER SUPPLIESDESCRIPTION
3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM DataSheet4U.com DataSheeABSOLUTE MAXIMUM RATINGS
Symb ol V CES V CEO VEBO IC I CM IB I BM P tot T s tg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction T emperature o Valu e 1200 600 7 4 8 3 6 70 -65 to 150 150 Un it V V V A A A A W o o C C 1/6 September 1997 DataSheet4U.com DataSheet 4 U .com SGSF324 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1200 V V EC = 380 V V EC = 600 V V BE = 7 V I C = 100 mA I C = 1.75 A I C = 1.25 A I C = 1.75 A I C = 1.25 A IB = 0.35 A IB = 0.18 A IB = 0.
