STMicroelectronics SGSIF344FP
The device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. It is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors.| Part No. | SGSIF344FP |
|---|---|
| Datasheet | SGSIF344FP Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: s SWITCH MODE POWER SUPPLIES s HORIZONTAL DEFLECTION FOR COLOUR TVS AND MONITORSDESCRIPTION
TO-220FP 3 1 2 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symb ol V CES V CEO VEBO IC I CM IB I BM P tot T s tg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T otal Dissipation at Tc = 25 o C Storage Temperature Max. Operating Junction T emperature Valu e 1200 600 7 7 12 5 8 40 -65 to 150 150 Un it V V V A A A A W o C o C February 1999 1/6 SGSIF344FP THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 3.12 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1200 V V EC = 380 V V EC = 600 V V BE = 7 V I C = 100 mA...
