SGSP321 Datasheet | STMicroelectronics

.~ .'YL S~DG©OSO@-~1[HL~O©l MJOOS@O~DN©~ SGSP321 SGSP322 - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP321 SGSP322 Voss 60 V 50 V Ros(on) 0.130 0.130 10 16 A 16 A - HIGH SPEED SWITCHING APPLICATIONS - LOW VOLTAGE DCIDC CONVERTERS - ULTRA FAST SWITCHING - EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: - SWITCHING POWER SUPPLIES - MOTOR CONTROLS - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Uses include motor speed control, low voltage DCIDC converters and solenoid driving. TO-220 G~ INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc <25°C Derating factor T stg Storage temperature Tj Max. operating junction temperature (e) Pulse width limited by safe operating area June...