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SGSP321 Datasheet PDF

STMicroelectronics SGSP321

N-CHANNEL POWER MOS TRANSISTORS

Part No. SGSP321
Datasheet SGSP321 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL POWER MOS TRANSISTORS
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SGSP321 datasheet page 1 preview

APPLICATIONS

● LOW VOLTAGE DCIDC CONVERTERS
● ULTRA FAST SWITCHING
● EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL

APPLICATIONS

:
● SWITCHING POWER SUPPLIES
● MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Uses include motor speed control, low voltage DCIDC converters and solenoid driving. TO-220 G~ INTERNAL SCHEMATIC DIAGRAM 5

ABSOLUTE MAXIMUM RATINGS

Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc <25°C Derating factor T stg Storage temperature Tj Max. operating junction temperature (e) Pulse width limited by safe operating area June 1988 SGSP321 SGSP322 60 50 V 60 50 V ±20 V 16 A 10 A 40 A 40 A 75 W 0.6 W/oC -65 to 150 °C 150 °C 1/5 481 SGSP321 - SGSP32...
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