STMicroelectronics SGSP330
N-CHANNEL POWER MOS TRANSISTORS
APPLICATIONS
● HIGH VOLTAGE - 450V FOR OFF-LINE SMPS● ULTRA FAST SWITCHING FOR OPERATION AT> 100KHz
● EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● SWITCHING POWER SUPPLIES
● MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include switching power supplies, uninterruptible power supplies and motor speed control. TO-220 INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc=25°C Drain current (cont.) at Tc=100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc <25°C Derating factor Tstg Storage temperature Tj Max. operating junction temperature (.) Pulse width limited by safe operating area June 1988 450 450 ±20 3 1.9 12 12 75 0.6 -65 to 150 150 V V V A A A A W W/oC...