STMicroelectronics SGSP382
N-CHANNEL POWER MOS TRANSISTORS
| Part No. | SGSP382 |
|---|---|
| Datasheet | SGSP382 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOS TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
● 60 VOLTS - DC/DC AND UPSAPPLICATIONS
● HIGH CURRENT● ULTRA FAST SWITCHING
● EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● DC/DC CONVERTERS AND UPS
● MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Typical uses include UPS, battery chargers, printer mechanism drives and motor speed control TO-220 INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc <25°C Derating factor T stg Storage temperature Tj Max. operating junction temperature (e) Pulse width limited by safe operating area June 1988 SGSP381 SGSP382 60 50 V 60 50 V ±20 V 28 A 17 A 112 A 112 A 100 W 0.8 W/oC -65 to 150 °...
