SGSP461 Datasheet | STMicroelectronics

SGSP461 SGSP462 - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP461 SGSP462 Voss 100 V 80 V Ros(on) 0.15 {} 0.1 {} 10 20 A 25 A - HIGH SPEED SWITCHING APPLICATIONS - 80 - 100 VOLTS - FOR UPS APPLICATIONS - RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) - - ULTRA FAST SWITCHING - EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: - UNINTERRUPTIBLE POWER SUPPLIES - MOTOR CONTROLS - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Typical applications include UPS, battery chargers, printer hammer drivers, solenoid drivers and motor control. TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS VDS VDGR VGS 10 10 10M (e) Ptot Tstg Tj Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 K{}) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by safe operating area - Introduced in 1988 week 44 June 1988 SGSP462 ±20 W/o C -65 to...