STMicroelectronics SGSP481
N-CHANNEL POWER MOS TRANSISTORS
APPLICATIONS
● 60 VOLTS - DC/DC AND UPSAPPLICATIONS
● ULTRA FAST SWITCHING● EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● DCIDC CONVERTERS AND UPS
● MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Typical uses include UPS, battery chargers, printer mechanism drives and motor speed control. TO-218 INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
VOGR VGS 10 10 10M (e) IDLM (e) Tstg Tj Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 K{}) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by safe operating area June 1988 5 SGSP481 SGSP482 60 50 V 60 50 V ±20 V 30 A 19 A 120 A 120 A 125 W W...