STMicroelectronics SGSP491
N-CHANNEL POWER MOS TRANSISTORS
APPLICATIONS
● 50 - 60 VOLTS FOR INVERTER AND UPS● HIGH 9URRENT - VOS (on) ::51V at 20A
● RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST)
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● EASY DRIVE - REDUCED SIZE AND COST INDUSTRIAL
APPLICATIONS
:● DC/DC CONVERTERS
● MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications such as DC/DC converters, UPS, inverters, battery changers and solar power converters. TO-218 INTERNAL SCHEMATIC DIAGRAM 5
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc=25°C Drain current (cont.) at Tc = 100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Tstg Storage temperature Tj Max. operating junction temperature (-) Pulse width limited by safe operating area● Introduced in 1988 week 44 June 1988 SGSP491 SGSP492 60 50 V 60 50 V ±20 V 40 A 25 A 160...