STMicroelectronics SGSP579
N-CHANNEL POWER MOS TRANSISTORS
| Part No. | SGSP579 |
|---|---|
| Datasheet | SGSP579 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOS TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
● HIGH VOLTAGE - 9A FOR UP TO 350W SMPS● ULTRA FAST SWITCHING - FOR OPERATION AT> 100KHz
● EASY DRIVE - REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● SWITCHING MODE POWER SUPPLIES
● MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies and motor speed control. TO-3 INTERNAL SCHEMATIC DIAGRAM 5
ABSOLUTE MAXIMUM RATINGS
VOGR VGS 10 Tstg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KQ) Gate-source voltage Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc = 100°C Drain current (pulsed) Drain inductive current, clamped Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by safe operating area June 1988 500 500 ±20 9 5.6 36 36 150 1.2 -65 to 150...
