SGSP591 Datasheet | STMicroelectronics

.!.'~=:1-m= S~DG©OSO@-~T[]HJ~O©l MJOSO@O~DN©~ SGSP591 SGSP592 - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP591 SGSP592 Voss 60 V 50 V ROS(on) 0.0330 0.0330 10 40 A 40 A - HIGH SPEED SWITCHING APPLICATIONS - 50 - 60 VOLTS FOR INVERTERS AND UPS - HIGH CURRENT - VOS(on) :5 1V at 20A - RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) - - EASY DRIVE - REDUCES SIZE AND COST INDUSTRIAL APPLICATIONS: - DC/DC CONVERTERS - MOTOR CONTROLS - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching circuits applications such as DC/DC converters, UPS, inverters, battery chargers and solar power converters. TO-3 INTERNAL SCHEMATIC DIAGRAM s ABSOLUTE MAXIMUM RATINGS Vos VOGR V GS 10 10 10M (e) Ptot Tstg Tj Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by safe operating area - Introduced in 1988 week 44 June 1988 SGSP592 ±20...