STMicroelectronics SGSP591
N-CHANNEL POWER MOS TRANSISTORS
| Part No. | SGSP591 |
|---|---|
| Datasheet | SGSP591 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOS TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
● 50 - 60 VOLTS FOR INVERTERS AND UPS● HIGH CURRENT - VOS(on) :5 1V at 20A
● RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST)
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● EASY DRIVE - REDUCES SIZE AND COST INDUSTRIAL
APPLICATIONS
:● DC/DC CONVERTERS
● MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching circuits applications such as DC/DC converters, UPS, inverters, battery chargers and solar power converters. TO-3 INTERNAL SCHEMATIC DIAGRAM s
ABSOLUTE MAXIMUM RATINGS
Vos VOGR V GS 10 10 10M (e) Ptot Tstg Tj Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (cont.) at Tc = 25°C Drain current (cont.) at Tc= 100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by safe operating area● Introduced in 1988 week 44 June 1988 SGSP591 SGS...
