STMicroelectronics SGT070R70HTO
The SGT070R70HTO is a 700 V, 26 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.| Part No. | SGT070R70HTO |
|---|---|
| Datasheet | SGT070R70HTO Download |
| Manufacturer |  STMicroelectronics |
| Description | 700V 26A PowerGaN transistor |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID SGT070R70HTO 700 V 70 mΩ 26 A● Enhancement mode normally off transistor
● Very high switching speed
● High power management capability
● Extremely low capacitances
● Kelvin source pad for optimum gate driving
● Zero reverse recovery charge
● ESD safeguard Series G-HEMT
APPLICATIONS
G(8) KS(7) S(1,2,3,4,5,6)● AC-DC converters
● DC-DC converters
● Solar inverters G8KS7S123456D91011
DESCRIPTION
Product status link SGT070R70HTO Product summary Order code SGT070R70HTO Marking 070R70H Package TO-LL Packing Tape and reel DS14994 - Rev 1 - June 2025 For further information, contact your local STMicroelectronics sales office. SGT070R70HTO Electrical ratings 1 Electrical ratings TC = 25 °C unless otherwise specified. Table 1. Absolute maximum ratings Symbol Parameter Value Drain-source voltage VDS Drain-source voltage (transient, tp < 200 μs) 700(1) 800 VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C -6 to 7 26(2) IDM Pulse drain curr...
