SGT080R70ILB Description
The SGT080R70ILB is a 700 V, 29 A e-mode PowerGaN transistor bined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances. SGT080R70ILB Electrical ratings 1 Electrical ratings TC = 25 °C unless otherwise specified.
SGT080R70ILB Key Features
- Enhancement mode normally off transistor
- Very high switching speed
- High power management capability
- Extremely low capacitances
- Kelvin source pad for optimum gate driving
- Zero reverse recovery charge
- ESD safeguard