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SGT080R70ILB - 700V 29A PowerGaN transistor

General Description

The SGT080R70ILB is a 700 V, 29 A e-mode PowerGaN transistor combined with a well established packaging technology.

Key Features

  • 5 4 Order code VDS RDS(on) max. ID TAB 1 8 SGT080R70ILB 700 V 80 mΩ 29 A.
  • Enhancement mode normally off transistor 4 5 PowerFLAT 8x8 HV for PowerGaN.
  • Very high switching speed.
  • High power management capability.
  • Extremely low capacitances.
  • Kelvin source pad for optimum gate driving D(1,2,3,4).
  • Zero reverse recovery charge.
  • ESD safeguard Series G-HEMT G(8).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Prerelease product(s) SGT080R70ILB Datasheet 700 V, 60 mΩ typ., 29 A, e-mode PowerGaN transistor 8 1 Features 5 4 Order code VDS RDS(on) max.