SGT080R70ILB Overview
Description
The SGT080R70ILB is a 700 V, 29 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Key Features
- Enhancement mode normally off transistor 4 5 PowerFLAT 8x8 HV for PowerGaN
- Very high switching speed
- High power management capability
- Extremely low capacitances
- Kelvin source pad for optimum gate driving D(1,2,3,4)
- Zero reverse recovery charge
- ESD safeguard Series G-HEMT G(8)
