STMicroelectronics SGT100R70FDC
The SGT100R70FDC is a 700 V V, 21 A A e-mode PowerGaN transistor. The resulting device provides extremely low conduction losses, high current capability and ultra-fast switching operation to enable high power density and unbeatable efficiency performances.| Part No. | SGT100R70FDC |
|---|---|
| Datasheet | SGT100R70FDC Download |
| Manufacturer |  STMicroelectronics |
| Description | 700V 21A PowerGaN transistor |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID SGT100R70FDC 700 V 100 mΩ 21 A● Enhancement mode normally off transistor
● Very high switching speed
● High power management capability
● Extremely low capacitances
● Zero reverse recovery charge
● ESD safeguard Series G-HEMT
APPLICATIONS
● AC-DC converters● DC-DC converters
● USB type-C PD adapters and quick chargers
● Wireless charging
DESCRIPTION
Product status link SGT100R70FDC Product summary Order code SGT100R70FDC Marking 100R70F Package PowerFLAT 5x6 HV for PowerGaN Packing Tape and reel DS15190 - Rev 2 - July 2026 For further information, contact your local STMicroelectronics sales office. SGT100R70FDC Electrical ratings 1 Electrical ratings TC = 25 °C unless otherwise specified. Table 1. Absolute maximum ratings Symbol Parameter Value Drain-source voltage VDS Drain-source voltage (transient, tp < 200 μs) 700(1) 800 VGS Gate-source voltage ID Drain current (continuous) -6 to 7(2) 21 IDM Pulse drain current (tp = 10 μs) 41 PTOT Total power dissipation at TC = 25 °C 107 Tstg Storage temperature range TJ Operating junction temperature range -55 to 150 1.
