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SGT105R70ILB - 700V 21.7A e-mode PowerGaN transistor

General Description

The SGT105R70ILB is a 700 V, 21.7 A e-mode PowerGaN transistor combined with a well established packaging technology.

Key Features

  • Order code VDS RDS(on) max. SGT105R70ILB 700 V 105 mΩ.
  • Enhancement mode normally off transistor.
  • Very high switching speed.
  • High power management capability.
  • Extremely low capacitances.
  • Kelvin source pad for optimum gate driving.
  • Zero reverse recovery charge.
  • ESD safeguard ID 21.7 A Series G-HEMT G(8).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Prerelease product(s) SGT105R70ILB Datasheet 700 V, 80 mΩ typ., 21.7 A, e-mode PowerGaN transistor 8 1 5 4 TAB 1 8 4 5 PowerFLAT 8x8 HV for PowerGaN D(1,2,3,4) Features Order code VDS RDS(on) max. SGT105R70ILB 700 V 105 mΩ • Enhancement mode normally off transistor • Very high switching speed • High power management capability • Extremely low capacitances • Kelvin source pad for optimum gate driving • Zero reverse recovery charge • ESD safeguard ID 21.7 A Series G-HEMT G(8) Applications • • KS(7) S(5,6,TAB) • G8D1234S56TABKS7 • Adapters for tablets, notebook and AIO USB type-C PD adapters and quick chargers AC-DC converters DC-DC converters Description The SGT105R70ILB is a 700 V, 21.