STMicroelectronics SGT105R70ILB
The SGT105R70ILB is a 700 V, 21.7 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.| Part No. | SGT105R70ILB |
|---|---|
| Datasheet | SGT105R70ILB Download |
| Manufacturer |  STMicroelectronics |
| Description | 700V 21.7A e-mode PowerGaN transistor |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. SGT105R70ILB 700 V 105 mΩ● Enhancement mode normally off transistor
● Very high switching speed
● High power management capability
● Extremely low capacitances
● Kelvin source pad for optimum gate driving
● Zero reverse recovery charge
● ESD safeguard ID 21.7 A Series G-HEMT G(8)
APPLICATIONS
●● KS(7) S(5,6,TAB)
● G8D1234S56TABKS7
● Adapters for tablets, notebook and AIO USB type-C PD adapters and quick chargers AC-DC converters DC-DC converters
DESCRIPTION
Product status link SGT105R70ILB Product summary Order code SGT105R70ILB Marking 105R70I Package PowerFLAT 8x8 HV for PowerGaN Packing Tape and reel DS14979 - Rev 3 - May 2026 For further information, contact your local STMicroelectronics sales office. SGT105R70ILB Electrical ratings 1 Electrical ratings TC = 25 °C unless otherwise specified. Table 1. Absolute maximum ratings Symbol Parameter Value Drain-source voltage VDS Drain-source voltage (transient, tp < 200 μs) 700(1) 800 VGS Gate-source...
