STMicroelectronics SGT120R65AL
The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.| Part No. | SGT120R65AL |
|---|---|
| Datasheet | SGT120R65AL Download |
| Manufacturer |  STMicroelectronics |
| Description | PowerGaN transistor |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID SGT120R65AL 650 V 120 mΩ 15 A● Enhancement mode normally off transistor
● Very high switching speed
● High power management capability
● Extremely low capacitances
● Kelvin source pad for optimum gate driving
● Zero reverse recovery charge Series G-HEMT G(4)
APPLICATIONS
KS(3) S(1,2) G4D5678S12KS3● Adapters for tablets, notebook and AIO
● USB type-C PD adapters and quick chargers
● Wireless chargers
DESCRIPTION
Product status link SGT120R65AL Product summary Order code SGT120R65AL Marking 120R65A Package PowerFLAT 5x6 HV for PowerGaN Packing Tape and reel DS13322 - Rev 11 - March 2023 For further information contact your local STMicroelectronics sales office. SGT120R65AL Electrical ratings 1 Electrical ratings TC = 25 °C unless otherwise specified. Symbol VDS VGS ID IDM PTOT Tstg TJ Table 1. Absolute maximum ratings Parameter Drain-source voltage Drain-source voltage (transient, tp < 1 μs) Gate-source voltage Drain current (continuous) at TC =...
