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SGT120R65AL - PowerGaN transistor

General Description

The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology.

Key Features

  • Order code VDS RDS(on) max. ID SGT120R65AL 650 V 120 mΩ 15 A.
  • Enhancement mode normally off transistor.
  • Very high switching speed.
  • High power management capability.
  • Extremely low capacitances.
  • Kelvin source pad for optimum gate driving.
  • Zero reverse recovery charge Series G-HEMT G(4).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGT120R65AL Datasheet 650 V, 75 mΩ typ., 15 A, e-mode PowerGaN transistor 1 2 34 PowerFLAT 5x6 HV for PowerGaN D(5,6,7,8) Features Order code VDS RDS(on) max. ID SGT120R65AL 650 V 120 mΩ 15 A • Enhancement mode normally off transistor • Very high switching speed • High power management capability • Extremely low capacitances • Kelvin source pad for optimum gate driving • Zero reverse recovery charge Series G-HEMT G(4) Applications KS(3) S(1,2) G4D5678S12KS3 • Adapters for tablets, notebook and AIO • USB type-C PD adapters and quick chargers • Wireless chargers Description The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology.