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SGT140R70ILB Datasheet PDF

STMicroelectronics SGT140R70ILB

The SGT140R70ILB is a 700 V, 17 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Part No. SGT140R70ILB
Datasheet SGT140R70ILB Download
Manufacturer
STMicroelectronics
Description 700V 17A PowerGaN transistor
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SGT140R70ILB datasheet page 1 preview

FEATURES

5 4 Order code VDS RDS(on) max. ID TAB 1 8 SGT140R70ILB 700 V 140 mΩ 17 A
● Enhancement mode normally off transistor 4 5 PowerFLAT 8x8 HV for PowerGaN
● Very high switching speed
● High power management capability
● Extremely low capacitances
● Kelvin source pad for optimum gate driving D(1,2,3,4)
● Zero reverse recovery charge
● ESD safeguard Series G-HEMT G(8)

APPLICATIONS

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● KS(7) S(5,6,TAB)
● G8D1234S56TABKS7
● Adapters for tablets, notebook and AIO USB type-C PD adapters and quick chargers AC-DC converters DC-DC converters

DESCRIPTION

Product status link SGT140R70ILB Product summary Order code SGT140R70ILB Marking 140R70I Package PowerFLAT 8x8 HV for PowerGaN Packing Tape and reel DS14980 - Rev 1 - May 2025 For further information, contact your local STMicroelectronics sales office. SGT140R70ILB Electrical ratings 1 Electrical ratings TC = 25 °C unless otherwise specified. Table 1. Absolute maximum ratings Symbol Parameter Value Drain-source voltage VDS Drain-source volt...
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