STMicroelectronics SGT1D5R10MEA
The SGT1D5R10MEA is a 100 V, 501 A e-mode PowerGaN transistor. The resulting device provides extremely low conduction losses, high current capability and ultrafast switching operation to enable high power density and unbeatable efficiency performances.| Part No. | SGT1D5R10MEA |
|---|---|
| Datasheet | SGT1D5R10MEA Download |
| Manufacturer |  STMicroelectronics |
| Description | 100V 501A PowerGaN transistor |
| Buy | Stock & Price |
FEATURES
Order code SGT1D5R10MEA VDS 100 V RDS(on) max. 1.5 mΩ● Dual side cooling package
● Enhancement mode normally off transistor
● Extremely low capacitances
● High power management capability
● Very high switching speed
● Zero reverse recovery charge ID 501 A Series G-HEMT
APPLICATIONS
G(4) S(1,2,3,TAB)● DC-DC converters
● Motor driver
● Solar system MPPT G4D5678S123TAB
DESCRIPTION
Product status link SGT1D5R10MEA Product summary Order code SGT1D5R10MEA Marking 1D5R10M Package En-FCLGA 5X6 Packing Tape and reel DS15272 - Rev 1 - July 2026 For further information, contact your local STMicroelectronics sales office. SGT1D5R10MEA Electrical ratings 1 Electrical ratings TC = 25 °C unless otherwise specified. Symbol VDS VGS ID IDM PTOT Tstg TJ Table 1. Absolute maximum ratings Parameter Drain-source voltage Drain-source voltage (transient) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Pulse drain current (tp = 100 μs) at TC = 2...
