STMicroelectronics SGT350R70GTK
The SGT350R70GTK is a 700 V, 6 A e-mode PowerGaN transistor combined with a well-established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultrafast switching operation to enable high-power density and unbeatable efficiency performances.| Part No. | SGT350R70GTK |
|---|---|
| Datasheet | SGT350R70GTK Download |
| Manufacturer |  STMicroelectronics |
| Description | 700V 6A PowerGaN transistor |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID SGT350R70GTK 700 V 350 mΩ 6A● Enhancement mode normally off transistor
● Very high switching speed
● High power management capability
● Extremely low capacitances
● Zero reverse recovery charge
● ESD safeguard Series G-HEMT
APPLICATIONS
● G1S2TAB3D_GaN● Adapters for tablets, notebook and AIO USB type-C PD adapters and quick chargers
DESCRIPTION
Recommended for consumer QR applications with zero current turn-on. Product status link SGT350R70GTK Product summary Order code SGT350R70GTK Marking 350R70G Package DPAK Packing Tape and reel DS14998 - Rev 2 - July 2025 For further information, contact your local STMicroelectronics sales office. SGT350R70GTK Electrical ratings 1 Electrical ratings TC = 25 °C unless otherwise specified. Table 1. Absolute maximum ratings Symbol Parameter Value Drain-source voltage VDS Drain-source voltage (transient, tp < 200 μs) 700(1) 800 VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C -1.4 to 7 6(2)...
