STMicroelectronics SGT3D5R10MEB
The SGT3D5R10MEB is a 100 V, 201 A e-mode PowerGaN transistor. The resulting device provides extremely low conduction losses, high current capability and ultrafast switching operation to enable high power density and unbeatable efficiency performances.| Part No. | SGT3D5R10MEB |
|---|---|
| Datasheet | SGT3D5R10MEB Download |
| Manufacturer |  STMicroelectronics |
| Description | 100V 201A PowerGaN transistor |
| Buy | Stock & Price |
FEATURES
Order code SGT3D5R10MEB VDS 100 V RDS(on) max. 3.5 mΩ● Dual side cooling package
● Enhancement mode normally off transistor
● Extremely low capacitances
● High power management capability
● Very high switching speed
● Zero reverse recovery charge ID 201 A Series G-HEMT G(9)
APPLICATIONS
S(1,2,3,4,TAB) G9D5678S1234● DC-DC converters
● Motor driver
● Solar system MPPT
DESCRIPTION
Product status link SGT3D5R10MEB Product summary Order code SGT3D5R10MEB Marking 3D5R10M Package En-FCLGA 3.3x3.3 Packing Tape and reel DS15275 - Rev 1 - July 2026 For further information, contact your local STMicroelectronics sales office. SGT3D5R10MEB Electrical ratings 1 Electrical ratings TC = 25 °C unless otherwise specified. Symbol VDS VGS ID IDM PTOT Tstg TJ Table 1. Absolute maximum ratings Parameter Drain-source voltage Drain-source voltage (transient) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Pulse drain current (tp = 100 μs) at TC...
