STMicroelectronics SGT65R65AL
The SGT65R65AL is a 650 V, 25 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.| Part No. | SGT65R65AL |
|---|---|
| Datasheet | SGT65R65AL Download |
| Manufacturer |  STMicroelectronics |
| Description | e-mode PowerGaN transistor |
| Buy | Stock & Price |
FEATURES
1 2 34 PowerFLAT 5x6 HV for PowerGaN D(5,6,7,8) Order code VDS RDS(on) max. ID SGT65R65AL 650 V 65 mΩ 25 A● Enhancement mode normally off transistor
● Very high switching speed
● High power management capability
● Extremely low capacitances
● Kelvin source pad for optimum gate driving
● Zero reverse recovery charge Series G-HEMT G(4)
APPLICATIONS
● AC-DC converters● AC-DC PSU for server and telecom KS(3) S(1,2) G4D5678S12KS3
● LED illumination
● Uninterruptable power supplies (UPS)
DESCRIPTION
Product status link SGT65R65AL Product summary Order code SGT65R65AL Marking 65R65A Package PowerFLAT 5x6 HV for PowerGaN Packing Tape and reel DS13251 - Rev 8 - September 2023 For further information contact your local STMicroelectronics sales office. SGT65R65AL Electrical ratings 1 Electrical ratings TC = 25 °C unless otherwise specified. Table 1. Absolute maximum ratings Symbol Parameter Drain-source voltage VDS Drain-source voltage (transient, tp < 1 μs) VGS Gate-source voltage ID...
