STMicroelectronics SM6T
The SM6T Transil series has been designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2, MIL STD 883E Method 3015, and electrical over stress such as IEC 61000-4-4 and 5. They are, more generally, suitable for surges below 600 W, 10/1000 µs This planar technology makes the SM6T compatible with high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time.FEATURES
● Peak Pulse Power: 600 W (10/1000 µs)● Breakdown voltage range: From 6.8 V to 220 V
● Uni and Bidirectional types
● Low clamping factor
● Fast response time
● UL recognized
DESCRIPTION
Automotive grade versions are available (see Section 4: Ordering information). SM6T Transil™ A K Unidirectional Bidirectional SMB (JEDEC DO-214AA) TM: Transil is a trademark of STMicroelectronics March 2008 Rev 6 1/9 9 Characteristics SM6T 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameter PPP P IFSM Peak pulse power dissipation(1) Power dissipation on infinite heatsink Non repetitive surge peak forward current for unidirectional types Tj initial = Tamb Tamb = 50 °C tp = 10 ms Tj initial = Tamb Tstg Storage temperature range Tj Operating junction temperature range TL Maximum lead temperature for soldering during 10 s. 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistance Symbol Parameter Rth(j-l) Rth(j-a) Junction to leads Junction to ambient on printed circuit on recommended pad layout Value 600 5 100 -65 to 175 -55 to 150 260 Value 20 100 Table 3.