SMBJ10A Datasheet | STMicroelectronics

Features - Peak pulse power: 600 W (10/1000 μs) and 4 k W (8/20 μs) - Stand-off voltage range from 5 V to 188 V - Unidirectional and bidirectional types - Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C - Operating Tj max: 150 °C - High power capability at Tj max.: up to 515 W (10/1000 µs) - Lead finishing: matte tin plating plies with the following standards - UL94, V0 - J-STD-020 MSL level 1 - J-STD-002, JESD 22-B102 E3 and MIL-STD-750, method 2026 solderable matte tin plated leads - JESD-201 class 2 whisker test - IPC7531 footprint - JEDEC registered package outline - IEC 61000-4-4 level 4: - 4 k V - IEC 61000-4-2, C = 150 p F - R = 330 Ω exceeds level 4: - 30 k V (air discharge) - 30 k V (contact discharge) Description The SMBJ series are designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015, and electrical overstress according to IEC 61000-4-4 and 5. This device is more generally used against surges below 600 W (10/1000 μs). The Planar technology makes it suitable for high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time. The SMBJ series are packaged in SMB. DS1283 - Rev 12 - April 2021 For further information contact your local STMicroelectronics sales office. .st. SMBJ Characteristics Characteristics Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter VPP Peak pulse voltage IEC 61000-4-2 (C = 150 p F, R = 330 Ω) Contact discharge Air discharge PPP Peak pulse power dissipation 10/1000 µs, Tj initial = Tamb Tstg Storage temperature...