SMLVT3V3
SMLVT3V3 is LOW VOLTAGE TRANSIL manufactured by STMicroelectronics.
FEATURES s s s s s s
UNIDIRECTIONAL TRANSIL DIODE PEAK PULSE POWER : 600 W (10/1000µs) REVERSE STAND-OFF VOLTAGE = 3.3 V LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED
DESCRIPTION
The SMLVT3V3 is a Transil diode designed specifically for protecting 3.3V supplied sensitive equipment against transient overvoltages. Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes then particularly suited to protect voltage sensitive devices surb as MOS technology and low voltage supply IC’s.
SMB (JEDEC DO-214AA)
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol PPP P IFSM Tstg Tj TL Parameter Peak pulse power dissipation (see note 1) Power dissipation on infinite heatsink Non repetitive surge peak forward current Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s Tj initial = Tamb Tamb = 75°C tp = 10 ms Tj initial = Tamb Value 600 5 50
- 65 to + 175 175 260 Unit W W A °C °C °C
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCE Symbol Rth (j-l) Rth (j-a) Junction to leads Junction to ambient on printed circuit on remended pad layout Parameter Value 20 100 Unit °C/W °C/W
August 2001
- Ed : 2
1/4
ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM VBR VCL IRM IPP Parameter Stand-off voltage. Breakdown voltage. Clamping voltage. Leakage current @ VRM. Peak pulse current. Voltage temperature coefficient Forward voltage drop
I PP VCL VBR V RM VF I RM V IF I
αT
IRM @ VRM max Type
VBR @ IR min note 2
VCL @ IPP max 10/1000 µs V 7.3 A 50
VCL @ IPP max 8/20 µs V 10.3 A 200
αT max note 3 10-4/°C -5.3
C max note 4 p F 5200
A SMLVT3V3 200
V 3.3
V 4.1 m A 1
Fig. 1 : Peak pulse power dissipation versus initial junction temperature (printed circuit board).
PPP[Tj initial] PPP[Tj initial = 25°C]
% IPP 100 10 µS
P U L SE W AVE FO RM 1 0 /1 0 0 0 µ S
0 10 00 µ...
