SMP75-8
SMP75-8 is TRISIL manufactured by STMicroelectronics.
FEATURES
Bidirectional surge arrestor. Very low stand-off voltage : VRM = 8 V. High repetitive surge capability : IPP = 75 A (10/1000µs). Very low capacitance : C < 75 p F Low leakage current : < 2 µA
DESCRIPTION
The SMP75-8 is a very low voltage transient surge arrestor especially designed to protect sensitive telemunication equipment against lightning strikes and other transients.
(JEDEC DO-214AA)
MAIN APPLICATION XDSL TRANSMISSION EQUIPMENT
SCHEMATIC DIAGRAM
BENEFITS Protection against high energy surges. Very low breakover voltage : VBO < 15 V, thus avoiding saturationof transformer. No signal distortion thanks to very low capacitance.
PLIESWITHTHE FOLLOWINGSTANDARDS :
- BELLCORE TR-NWT -000974:
- CCITT K20:
- VDE 0433:
- VDE 0878:
- with series resistor or PTC.
10/1000 µs 10/1000 µs 10/700 µs 5/310 µs 10/700 µs 5/310 µs 1.2/50 µs 1/20 µs
1 k V 75A
- 4 k V 100A 4 k V 100A 4 k V 100A
January 1998
- Ed : 2
1/6
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Ipp ITSM Peak pulse current Non repetitive surge peak on-state current One cycle Non repetitive surge peak on-state current F = 50Hz TI Tstg Tj Maximum lead temperature for soldering during 10s Storage temperature range Maximum junction temperature Parameter 10/1000µs 8/20µs 50Hz 60Hz 0.2s 2s Value 75 250 35 37 14 6 260
- 55 to + 150 150 Unit A A A A A A °C °C °C
THERMAL RESISTANCES Symbol Rth(j-I) Rth(j-a) Junction to leads Junction to ambient on printed circuit (with standard footprint dimensions)
% IPP
Parameter
Value 20 100
Unit °C/W °C/W
Note 1: Pulse waveform 10 / 1000 µs 8 / 20 µs 5 / 310 µs 1 / 20 µs 2 / 10 µs tr = 10 µs tr = 8 µs tr = 5 µs tr = 1 µs tr = 2 µs tp = 1000 µs tp = 20 µs tp = 310 µs tp = 20 µs tp = 10 µs
100 50 0 tr tp
ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM IRM VR VBR VBO IH IBO IPP C Parameter Stand-off voltage Leakage current at stand-off voltage Continuous Reverse voltage Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse...
