SMTHBT200 Datasheet | STMicroelectronics

FEATURES BIDIRECTIONAL CROWBAR PROTECTION REPETITIVE PEAK PULSE CURRENT: IPP = 100 A (10/1000 µs) HOLDING CURRENT: IH = 150 m A BREAKDOWN VOLTAGE : 200V min BREAKOVER VOLTAGE : 265V max DESCRIPTION This protection device has been especially designed to protect subscriber line cards using SLICS without integrated ring generators. The SMTHBT200 device protects ring generator relays against transient SCHEMATIC DIAGRAM INACCORDANCE WITHTHEFOLLOWINGSTANDARDS : 10/700 µs 5/310 µs - VDE 0433: 10/700 µs 5/310 µs - VDE 0878: 1.2/50 µs 1/20 µs - FCC Part 68: 2/10 µs BELLCORE TR-NWT-001089: 2/10 µs - BELLCORE TR-NWT-000974: 10/1000 µs 10/1000 µs - CCITT K20: 4 k V 100 A 4 k V 100 A 4 k V 100 A 2.5 k V 500 A 1 k V 100 A August 1999 - Ed : 3A 1/6 THERMAL RESISTANCES Symbol Rth(j-I) Rth(j-a) Junction to leads Junction to ambient on printed circuit (with standard footprint dimensions) Parameter Value 10 75 Unit °C/W °C/W ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C, unless otherwise specified) Symbol Ipp Parameter Peak pulse current: 10/1000 µs (open circuit voltage waveform 10/1000 µs) 8/20 µs (open circuit voltage waveform 4k V 1.2/50 µs) Non repetitive surge peak on-state current Critical rate of rise of off-state voltage Maximum lead temperature for soldering during 10s Storage temperature range Maximum junction temperature tp = 20ms VRM Value 100 250 55 5 260 - 55 to + 150 150 Unit A A A KV/µs °C °C °C ITSM d V/dt TL Tstg Tj Note 1: Pulse waveform 10 / 1000 µs 8 / 20 µs 5 / 310 µs 1 / 20 µs 2 / 10 µs tr = 10 µs tr = 8 µs tr = 5 µs tr = 1 µs tr = 2 µs tp = 1000 µs tp = 20 µs tp = 310 µs tp = 20 µs tp = 10 µs % IPP 100 50 0 tr tp 2/6 ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM IRM VR VBR VBO IH IBO IPP C Parameter Stand-off voltage Leakage current at stand-off voltage Continuous Reverse voltage Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance STATIC PARAMETERS Type IRM @ VRM max. µA SMTHBT200 10...